Experimental analysis of variability in WS2-based devices for hardware security

This work investigates the variability of tungsten disulfide (WS2)-based devices by experimental characterization in view possible application field hardware security. To this aim, a preliminary analysis was performed measurements across voltages and temperatures on set seven Si/SiO2/WS2 back-gated devices, also considering effect different stabilization conditions their conductivity. Obtained results show appreciable conductivity, while revealing similar dependence bias temperature tested devices. Overall, our demonstrates that WS2-based can be potentially exploited to ensure adequate randomness robustness against environmental variations then used as building blocks for security primitives.